![]() ![]() Single-domain epitaxial graphene (EG) grown on the silicon face of SiC(0001) 18 has several advantages, such as removing the need to transfer the graphene onto an insulating substrate for device processing, as is the case for chemical vapor deposition (CVD) growth. Wafer-scale graphene material is of interest for quantum Hall resistance standards 1, 2, 3, 4, 5 and future nanoelectronics 6, 7, such as high frequency electronics 8, 9, 10, 11, 12, 13, 14, 15 and photonics 16, 17. Furthermore, CLSM shows excellent correlation with conventional optical microscopy, atomic force microscopy, Kelvin probe force microscopy, conductive atomic force microscopy, scanning electron microscopy and Raman mapping. It is powerful for analysis of 1–5 layers of exfoliated graphene on Si/SiO 2, and allows us to distinguish the interfacial layer and 1–3 layers of epitaxial graphene on SiC substrates. ![]() We demonstrate the optimized balance of image resolution and acquisition time of non-invasive confocal laser scanning microscopy (CLSM), rendering it an indispensable tool for rapid analysis of mass-produced graphene. Moreover, commercial application of graphene requires fast and large-area scanning capability. Ideally, characterization of graphene requires non-invasive techniques with single-atomic-layer thickness resolution and nanometer lateral resolution. They provide opportunities for both fundamental research and applications across a wide range of industries. Two-dimensional (2D) materials such as graphene have become the focus of extensive research efforts in condensed matter physics.
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